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RBO08-40G/M/T
REVERSED BATTERY AND Application Specific Discretes A.S.D.TM OVERVOLTAGE PROTECTION CIRCUIT (RBO)
FEATURES 8A DIODE TO GUARD AGAINST BATTERY REVERSAL. NEGATIVE OVERVOLTAGE PROTECTION BY CLAMPING. COMPLIANT WITH ISO/DTR 7637 STANDARD FOR PULSES 1, 2, 3a and 3b. SUITABLE FOR AUTOPROTECTED ALTERNATOR ENVIRONMENT. BREAKDOWN VOLTAGE : 24 V min. CLAMPING VOLTAGE : 40 V max. MONOLITHIC STRUCTURE FOR GREATER RELIABILITY.
D2PAK RBO08-40G
DESCRIPTION Designed to protect against battery reversal and overvoltages in automotive applications, this monolithic component offers multiple functions in the same package : D1 : reversed battery protection T1 : clamping against negative overvoltages T2 : Transil function for overvoltage protection.
PowerSO-10TM RBO08-40M
TO220AB RBO08-40T
FUNCTIONAL DIAGRAM
1
3
2
January 1998 - Ed : 2
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RBO08-40G / RBO08-40M / RBO08-40T
ABSOLUTE MAXIMUM RATINGS Symbol IFSM IF PPP PPP Tstg Tj TL Parameter Non repetitive surge peak forward current (Diode D1) DC forward current (Diode D1) Peak pulse power between Input and Output (Transil T1) see note 1 Tj initial = 25C tp = 10 ms Tc = 75C 10/1000 s Value 80 8 600 1500 - 40 to + 150 150 260 Unit A A W W C C
Peak pulse power between Pins 3 and 2 (10/1000s) Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10 s at 4.5mm from case for TO220AB
Note 1 : for a surge greater than the maximum value, the device will fail in short-circuit.. TM : PowerSO-10, TRANSIL and ASD are trademarks of SGS-THOMSON Microelectronics.
THERMAL RESISTANCE Symbol Rth (j-c) Junction to case Parameter RBO08-40M RBO08-40G RBO08-40T Value 2.4 2.4 2.4 Unit C/W
D1 1 3
I32
I13
IF
Ipp32
T1
2
T2
IR32 IR M 32
VCL 31 VBR31 VRM31 VF13 IRM31 IR31
V13
VRM 32 VB R 32 VC L 32
V32
1
3
Ipp31
2
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RBO08-40G / RBO08-40M / RBO08-40T
Symbol VRM31/VRM32 VBR31/VBR32 IR31/IR32 VCL31/VCL32 VF13 IPP T C31/C32 Parameter Stand-off voltage Transil T1 / Transil T2. Breakdown voltage Transil T1 / Transil T2. Leakage current Transil T1 / Transil T2. Clamping voltage Transil T1 / Transil T2. Forward voltage drop Diode D1. Peak pulse current. Temperature coefficient of VBR. Capacitance Transil T1 / Transil T2. Value Min. RBO08-40M/G RBO08-40T RBO08-40M/G RBO08-40T IF = 4 A @ Tamb = 25C VF 13 IF = 1 A IF = 1 A @ Tamb = 25C IF = 1 A @ Tj = 85C ELECTRICAL CHARACTERISTICS : TRANSIL T1 (- 40C < Tamb < + 85C) Symbol VBR 31 VBR 31 IRM 31 IRM 31 VCL 31 T C 31 IR = 1 mA IR = 1 mA, Tamb = 25C VRM = 20 V VRM = 20 V, Tamb = 25C IPP = 15A, Tj initial = 25C Temperature coefficient of VBR F = 1MHz VR = 0 V 1000 10/1000s Test Conditions Value Min. 22 24 Typ. Max. 35 32 50 10 40 9 Unit V V A A V 10 /C
-4
ELECTRICAL CHARACTERISTICS : DIODE D1 (- 40C < Tamb < + 85C) Symbol VF 13 IF = 8 A IF = 8 A @ Tamb = 25C VF 13 IF = 4 A Test Conditions Typ. Max. 1.5 1.7 1.45 1.3 1.35 1.2 1.1 1.0 0.9 Unit V V V V V V V V V
pF
ELECTRICAL CHARACTERISTICS : TRANSIL T2 (- 40C < Tamb < + 85C) Symbol VBR 32 VBR 32 IRM 32 IRM 32 VCL 32 T C32 IR = 1 mA IR = 1 mA, Tamb = 25C VRM = 20 V VRM = 20 V, Tamb = 25C IPP = 37.5 A Temperature coefficient of VBR F = 1MHz VR = 0 V 2000 10/1000s Test Conditions Value Min. 22 24 Unit V V A A V 10 /C pF
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Typ.
Max. 35 32 50 10 40 8.5
-4
RBO08-40G / RBO08-40M / RBO08-40T
PRODUCT DESCRIPTION The RBO has 3 functions integrated on the same chip. D1 : "Diode function" in order to protect against reversed battery operation. T2 : "Transil function" in order to protect against positive surge generated by electric systems (ignition, relay. ...). T1 : Protection againt negative surges such as inductive overvoltages (see motor application below).
1
3
2
BASIC APPLICATION * The monolithic multi-function protection (RBO) has been developed to protect sensitive semiconductors in car electronic modules against both overvoltage and battery reverse. * In addition, the RBO circuit prevents overvoltages generated by the module from affecting the car supply network.
MOTOR DRIVER APPLICATION
BATTERY D1 T2 T1 MOTOR
Filter
RBO DEVICE
MOTOR CONTROL
In this application, one half of the motor drive circuit is supplied through the "RBO" and is thus protected as per its basic function application. The second part is connected directly to the "car supply network" and is protected as follows : - For positive surges : T2 (clamping phase) and D1 in forward-biased. - For negative surges : T1 (clamping phase) and T2 in forward-biased.
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RBO08-40G / RBO08-40M / RBO08-40T
PINOUT configuration in D2PAK : - Input (1) : Pin 1 - Output (3) : Pin 3 - Gnd (2) : Connected to base Tab Marking : Logo, date code, RBO08-40G
D1
T2
T1 TAB
PINOUT configuration in PowerSO-10 : - Input (1) : Pin 3 - Output (3) : Pin 7 and 9 - Gnd (2) : Connected to base Tab Marking : Logo, date code, RBO08-40M
Pin 1 (NC) Pin 2 (NC)
Input (1) D1 Output (3) T2
Pin 10 (NC) Pin 9 (Ouput 3) Pin 8 (NC) Pin 7 (Ouput 3)
Gnd (2) Tab
Pin 3 (Input 1) Pin 4 (NC) Pin 5 (NC)
T1
Pin 6 (NC)
TOP VIEW
PINOUT configuration in TO220AB : - Input (1) : Pin 1 - Output (3) : Pin 3 - GND (2) : Connected to base Tab Marking : Logo, date code, RBO08-40T
D1 T2
T1
(TAB)
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RBO08-40G / RBO08-40M / RBO08-40T
Fig. 1 : Peak pulse power versus exponential pulse duration (Tj initial = 85C).
Fig. 2-1 : Clamping voltage versus peak pulse current (Tj initial = 85C). Exponential waveform tp = 40 ms and tp = 1 ms (TRANSIL T2).
VCL(V) 45 40
Pp p (kW) 10.0 5.0 2.0 1.0 0.5
Diode D1 Transil T2
tp = 40ms
35
tp = 1ms
30
0.2 0.1 tp(ms) 1 2 5 10 20 50 100
25 0.1 0.2 0.5 1.0
Ipp(A) 2.0 5.0 10.0 20.0 50.0
Fig. 2-2 : Clamping voltage versus peak pulse current (Tj initial = 85C). Exponential waveform tp = 1 ms and tp = 20 s (TRANSIL T1).
VCL(V) 50
Fig. 3 : Relative variation of peak pulse power versus junction temperature.
Ppp[Tj]/Ppp[Tj initial=85C]
1.20 1.00 0.80
tp = 1ms tp = 20s
45 40 35 30 Ipp(A) 25 0.1 0.2 0.5 1.0 2.0 5.0 10.0 20.0 50.0 100.0
0.60 0.40 0.20 Tj initial (C) 0.00 0 25 50 75 100 125 150 175
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RBO08-40G / RBO08-40M / RBO08-40T
Fig. 4 : Relative variation of thermal impedance junction to case versus pulse duration.
Zth(j-c)/Rth(j-c) 1.0
Fig. 5-1 : Peak forward voltage drop versus peak forward current (typical values) - (TRANSIL T2).
VFM(V) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.1
0.5
Tj=25C
0.2 tp (s) 0.1 1E-3 1E-2 1E-1 1E+0 1E+1
Tj=150C
IFM (A)
1.0 10.0 20.0
Fig. 5-2 : Peak forward voltage drop versus peak forward current (typical values) - (DIODE D1).
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.1
Tj=150C Tj=25C
Fig. 6 : Relative variation of leakage current versus junction temperature.
VFM(V)
IFM (A)
1.0 10.0 20.0
ORDERING INFORMATION
RBO
08
-
40
M
Package : M = PowerSO-10 G = D2PAK T = TO220AB
Reversed Battery & Overvoltage protection
IF(AV) = 8 A
VCL = 40V
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RBO08-40G / RBO08-40M / RBO08-40T
PACKAGE MECHANICAL DATA D2PAK Plastic DIMENSIONS REF.
A E L2 C2
Millimeters Inches Min. Typ. Max. Min. Typ. Max. 4.30 2.49 0.03 0.70 1.40 0.45 1.21 8.95 10.00 4.88 15.00 1.27 1.40 0.40 0 8 0 0.60 0.017 1.36 0.047 9.35 0.352 10.28 0.393 5.28 0.192 15.85 0.590 1.40 0.050 1.75 0.055 0.016 8 4.60 0.169 2.69 0.098 0.23 0.001 0.93 0.027 0.055 0.024 0.054 0.368 0.405 0.208 0.624 0.055 0.069 0.181 0.106 0.009 0.037
A A1
D
L L3 A1 B2 B G A2 2.0 MIN. FLAT ZONE V2 C R
A2 B B2 C C2 D E G L L2 L3 R V2
FOOT-PRINT D2PAK
16.90
10.30 1.30
5.08
3.70 8.90
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RBO08-40G / RBO08-40M / RBO08-40T
SOLDERING RECOMMENDATION The soldering process causes considerable thermal stress to a semiconductor component. This has to be minimized to assure a reliable and extended lifetime of the device. The PowerSO-10 package can be exposed to a maximum temperature of 260C for 10 seconds. However a proper soldering of the package could be done at 215C for 3 seconds. Any solder temperature profile should be within these limits. As reflow techniques are most common in surface mounting, typical heating profiles are given in Figure 1,either for mounting on FR4 or on metal-backed boards. For each particular board, the appropriate heat profile has to be adjusted experimentally. The present proposal is just a starting point. In any case, the following precautions have to be considered : - always preheat the device - peak temperature should be at least 30 C higher than the melting point of the solder alloy chosen - thermal capacity of the base substrate Voids pose a difficult reliability problem for large surface mount devices. Such voids under the package result in poor thermal contact and the high thermal resistance leads to component failures. The PowerSO-10 is designed from scratch to be solely a surface mount package, hence symmetry in the x- and y-axis gives the package excellent weight balance. Moreover, the PowerSO-10 offers the unique possibility to control easily the flatness and quality of the soldering process. Both the top and the bottom soldered edges of the package are accessible for visual inspection (soldering meniscus). Coplanarity between the substrate and the package can be easily verified. The quality of the solder joints is very important for two reasons : (I) poor quality solder joints result directly in poor reliability and (II) solder thickness affects the thermal resistance significantly. Thus a tight control of this parameter results in thermally efficient and reliable solder joints.
Fig. 1 : Typical reflow soldering heat profile
Temperature (o C)
250
245 oC 215oC
200
Epoxy FR4 board
Soldering
150
Preheating
Cooling
100
Metal-backed board
50
0 0 40 80 120 160 200 240 280 320 360
Time (s)
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RBO08-40G / RBO08-40M / RBO08-40T
SUBSTRATES AND MOUNTING INFORMATION The use of epoxy FR4 boards is quite common for surface mounting techniques, however, their poor thermal conduction compromises the otherwise outstanding thermal performance of the PowerSO-10. Some methods to overcome this limitation are discussed below. One possibility to improve the thermal conduction is the use of large heat spreader areas at the copper layer of the PC board. This leads to a reduction of thermal resistance to 35 C for 6 cm2 of the board heatsink (see fig. 2). Use of copper-filled through holes on conventional FR4 techniques will increase the metallization and decrease thermal resistance accordingly. Using a configuration with 16 holes under the spreader of the package with a pitch of 1.8 mm and a diameter of 0.7 mm, the thermal resistance (junction heatsink) can be reduced to 12C/W (see fig. 3). Beside the thermal advantage, this solution allows multi-layer boards to be used. However, a drawback of this traditional material prevents its use in very high power, high current circuits. For instance, it is not advisable to surface mount devices with currents greater than 10 A on FR4 boards. A Power Mosfet or Schottky diode in a surface mount power package can handle up to around 50 A if better substrates are used.
Fig. 2 : Mounting on epoxy FR4 head dissipation by extending the area of the copper layer
Copper foil
FR4 board
Fig. 3 : Mounting on epoxy FR4 by using copper-filled through holes for heat transfer
Copper foil
FR4 board
heatsink
heat transfer
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RBO08-40G / RBO08-40M / RBO08-40T
A new technology available today is IMS - an Insulated Metallic Substrate. This offers greatly enhanced thermal characteristics for surface mount components. IMS is a substrate consisting of three different layers, (I) the base material which is available as an aluminium or a copper plate, (II) a thermal conductive dielectrical layer and (III) a copper foil, which can be etched as a circuit layer. Using this material a thermal resistance of 8C/W with 40 cm2 of board floating in air is achievable (see fig. 4). If even higher power is to be dissipated an external heatsink could be applied which leads to an Rth(j-a) of 3.5C/W (see Fig. 5), assuming that Rth (heatsink-air) is equal to Rth (junction-heatsink). This is commonly applied in practice, leading to reasonable heatsink dimensions. Often power devices are defined by considering the maximum junction temperature of the device. In practice , however, this is far from being exploited. A summary of various power management capabilities is made in table 1 based on a reasonable delta T of 70C junction to air. The PowerSO-10 concept also represents an attractive alternative to C.O.B. techniques. PowerSO-10 offers devices fully tested at low and high temperature. Mounting is simple - only conventional SMT is required - enabling the users to get rid of bond wire problems and the problem to control the high temperature soft soldering as well. An optimized thermal management is guaranteed through PowerSO-10 as the power chips must in any case be mounted on heat spreaders before being mounted onto the substrate.
Fig. 4 : Mounting on metal backed board
Fig. 5 : Mounting on metal backed board with an external heatsink applied
Copper foil FR4 board
Copper foil Insulation
Aluminium
Aluminium heatsink
TABLE 1 PowerSo-10 package mounted on 1.FR4 using the recommended pad-layout 2.FR4 with heatsink on board (6cm2) 3.FR4 with copper-filled through holes and external heatsink applied 4. IMS floating in air (40 cm2) 5. IMS with external heatsink applied Rth (j-a) 50 C/W 35 C/W 12 C/W 8 C/W 3.5 C/W P Diss 1.5 W 2.0 W 5.8 W 8.8 W 20 W
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RBO08-40G / RBO08-40M / RBO08-40T
PACKAGE MECHANICAL DATA
B
0.10 A B
10 H E 1
6 E2 E3 E1
5
SEATING PLANE
e
0.25 M
B
DETAIL "A"
A C Q
h A F A1
D D1
SEATING PLANE
A1 L
DETAIL "A"
E4
a
DIMENSIONS REF. A A1 B C D D1 E E1 E2
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DIMENSIONS REF. Max. 0.143 0.0039 0.0236 0.0217 0.378 0.299 0.374 0.291 0.299 E3 E4 e F H h L Q a 0 Millimeters Min. Typ. Max. 6.10 5.90 1.27 1.25 13.80 0.50 1.20 1.70 8 0 1.80 0.0472 0.067 8 1.35 0.0492 14.40 0.543 0.019 0.0708 Min. 6.35 0.240 6.10 0.232 0.05 0.0531 0.567 Inches Typ. Max. 0.250 0.240 Typ.
Millimeters Min. Typ. Max. 3.35 0.00 0.40 0.35 9.40 7.40 9.30 7.20 7.20 Min. 3.65 0.131 0.10 0.00 0.60 0.0157 0.55 0.0137 9.60 0.370 7.60 0.291 9.50 0.366 7.40 0.283 7.60 0.283
Inches
RBO08-40G / RBO08-40M / RBO08-40T
FOOT PRINT MOUNTING PAD LAYOUT RECOMMENDED HEADER SHAPE
Dimensions in millimeters SHIPPING TUBE
Dimensions in millimeters
DIMENSIONS (mm)
C B
A B C Length tube
TYP 18 12 0,8 532 50
A
Surface mount film taping : contact sales office
Quantity per tube
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RBO08-40G / RBO08-40M / RBO08-40T
PACKAGE MECHANICAL DATA TO220AB Plastic DIMENSIONS Millimeters Inches Min. A a1 a2 B b1 b2 C c1 c2 e F I L l2 l3 12.70 10.20 0.64 1.15 4.48 0.35 2.10 2.29 5.85 3.55 2.54 1.45 0.80 14.23 Max. 15.87 4.50 14.70 10.45 0.96 1.39 4.82 0.65 2.70 2.79 6.85 4.00 3.00 1.75 1.20 0.500 0.402 0.025 0.045 0.176 0.020 0.083 0.090 0.230 0.140 0.100 0.057 0.031 Min. 0.560 Max. 0.625 0.177 0.579 0.411 0.038 0.055 0.190 0.026 0.106 0.110 0.270 0.157 0.118 0.069 0.047
REF.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.
(c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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